23-24 December 2019
Bogolyubov Institute for Theoretical Physics of the National Academy of Sciences of Ukraine
Europe/Kiev timezone

Effect of resonant impurity scattering of carriers on Drude peak broadening in uniaxially strained graphene

23 Dec 2019, 12:35
20m
322 (Bogolyubov Institute for Theoretical Physics of the National Academy of Sciences of Ukraine)

322

Bogolyubov Institute for Theoretical Physics of the National Academy of Sciences of Ukraine

Metrolohichna Str. 14b, Kyiv, Ukraine
Oral Condensed Matter Physics Condensed Matter Physics

Speaker

Mr V. O. Shubnyi (Bogolyubov Institute for Theoretical Physics Institute for Condensed Matter of the National Academy of Sciences of Ukraine, Kyiv)

Description

An explanation is proposed for the recently observed in optical spectra of monolayer graphene giant increase in the Drude-peak width under applied uniaxial strain. We argue that the underlying mechanism of this increase can be based on resonant scattering of carriers from inevitably present impurities such as adsorbed atoms that can be described by the Fano-Anderson model. We demonstrate that the often neglected scalar deformation potential plays the essential role in this process. The conditions necessary for the maximum effect of the giant Drude-peak broadening are determined. It is stressed that the effect is strongly enhanced when the Fermi level gets closer to the Dirac point. Our theoretical analysis provides guidelines for functionalizing graphene samples in a way that would allow to modulate efficiently the Drude-peak width by the applied strain.

Primary author

Mr V. O. Shubnyi (Bogolyubov Institute for Theoretical Physics Institute for Condensed Matter of the National Academy of Sciences of Ukraine, Kyiv)

Co-authors

Mr S. G. Sharapov (Bogolyubov Institute for Theoretical Physics Institute for Condensed Matter of the National Academy of Sciences of Ukraine, Kyiv) Y. V. Skrypnyk (Bogolyubov Institute for Theoretical Physics Institute for Condensed Matter of the National Academy of Sciences of Ukraine, Kyiv) V.M. Loktev (Bogolyubov Institute for Theoretical Physics Institute for Condensed Matter of the National Academy of Sciences of Ukraine, Kyiv\ National Technical University of Ukraine KPI, Kyiv)

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